Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

In this study, we suggest a hierarchical model to\ud investigate the electrical performance of carbon nanotube (CNT)-\ud based interconnects. From the density functional theory, we have\ud obtained important physical parameters, which are used in TCAD\ud simulators to obtain the RC netlists. We then use these RC netlists\ud for the circuit-level simulations to optimize interconnect design in\ud VLSI. Also, we have compared various CNT-based interconnects\ud such as single-walled CNTs, multi-walled CNTs, doped CNTs, and\ud Cu-CNT composites in terms of conductivity, ring oscillator delay,\ud and propagation time delay.