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Trilayer Electron-beam Lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures
- Source :
- 35th International Conference on Infrared, Millimeter and Terahertz Waves, 05-10/09/2013, info:cnr-pdr/source/autori:Dominijanni, D.; Casini, R.; Foglietti, V.; Ortolani, M.; Notargiacomo, A.; Lanzieri, C.; Peroni, M.; Romanini, P.; Giovine, E./congresso_nome:35th International Conference on Infrared, Millimeter and Terahertz Waves/congresso_luogo:/congresso_data:05-10%2F09%2F2013/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
- Publication Year :
- 2010
- Publisher :
- IEEE, 2010.
-
Abstract
- Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes. © 2010 IEEE.
Details
- Database :
- OpenAIRE
- Journal :
- 35th International Conference on Infrared, Millimeter, and Terahertz Waves
- Accession number :
- edsair.doi.dedup.....d9d884e66f2ca5730c014b4a1ac67d7f