Reversible Switching of Interlayer Exchange Coupling through Atomically Thin VO2 via Electronic State Modulation

Summary Modulation of electronic properties in spintronic interfaces (spinterfaces) can give rise to the optimization and even emergence of abundant spintronic effects. However, a proof-of-concept demonstration of such a strategy has rarely been achieved. In this paper, we study the interlayer exchange coupling effect in a synthetic magnetic multilayer system [Pt/Co]2/VO2/[Co/Pt]2, where atomically thin phase-change material VO2 is adopted as a spinterface with reversible metal-to-insulator transition. Repeatable switching from antiferromagnetic coupling through insulating spinterface to ferromagnetic coupling through metallic spinterface is observed in this multilayer system. Further analyses indicate that such an evolution originates from two distinct coupling mechanisms of spin-dependent tunneling and Rudermann-Kittel-Kasuya-Yosida interaction determined by the electronic states of VO2. As an experimental demonstration of VO2-tailored interlayer exchange coupling effect, this work highlights the great potential of spinterface as a magic building block in beyond-CMOS electronic devices.