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Kink effect, transconductance increase and field enhanced electron emission in AlGaAs/GaAs NEMTs
- Source :
- Electronics Letters. 26:1520
- Publication Year :
- 1990
- Publisher :
- Institution of Engineering and Technology (IET), 1990.
-
Abstract
- Experimental results obtained in depletion AlGaAs/GaAs HEMTs showing the presence of a remarkable increase of transconductance with frequency associated with a kink effect in the current-voltage curves is reported. Transconductance increase occurs at high frequencies with increasing drain source voltage. All these effects are ascribed to field enhanced electron emission from deep levels present in the AlGaAs layer.
- Subjects :
- reliability
Materials science
Field (physics)
business.industry
Transconductance
GaAs
Electrical engineering
microwave devices
Electron
High-electron-mobility transistor
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
deep levels
transconductance
kink effect
dispersion effects
Gallium arsenide
chemistry.chemical_compound
Algaas gaas
chemistry
Optoelectronics
Voltage source
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 00135194
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- Electronics Letters
- Accession number :
- edsair.doi.dedup.....e094b242203535defa5796c489418160