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Rashba Effect in Functional Spintronic Devices
- Source :
- Advanced materials (Deerfield Beach, Fla.). 32(51)
- Publication Year :
- 2020
-
Abstract
- Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high-performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin-orbit torque devices. For spin field-effect transistors, the gate-voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all-electric spin field-effect transistors. For spin-orbit torque devices, recent theories and experiments on interface-generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed.
- Subjects :
- Materials science
Interface (computing)
02 engineering and technology
010402 general chemistry
01 natural sciences
law.invention
law
Torque
General Materials Science
Electronics
Spin-½
Hardware_MEMORYSTRUCTURES
Spintronics
business.industry
Mechanical Engineering
Transistor
Heterojunction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
0104 chemical sciences
Mechanics of Materials
Optoelectronics
Condensed Matter::Strongly Correlated Electrons
0210 nano-technology
business
Rashba effect
Subjects
Details
- ISSN :
- 15214095
- Volume :
- 32
- Issue :
- 51
- Database :
- OpenAIRE
- Journal :
- Advanced materials (Deerfield Beach, Fla.)
- Accession number :
- edsair.doi.dedup.....e55ff8525f042b4f3ab167b3308eb3cf