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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Authors :
Gerwin H. Gelinck
Alexander Kloes
Thomas Gneiting
Antonio Cerdeira
Ahmed Nejim
Magali Estrada
Arokia Nathan
Jan-Laurens van der Steen
Benjamin Iniguez
Slobodan Mijalković
Gerard Ghibaudo
Micael Charbonneau
K. Romanjek
Yvan Bonnassieux
Firas Mohamed
Tarragona Universita
Institut Polytechnique de Paris (IP Paris)
Institut LITEN (CEA LITEN/DEHT/LCPEM)
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Laboratoire Cellules et Composants, LITEN-DSEN/GENEC, Commissariat à l'Energie Atomique/Saclay, (CEA)
Laboratoire Cellules et Composants
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )
Université Grenoble Alpes (UGA)
Source :
IEEE Journal of the Electron Devices Society, IEEE Journal of the Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3106836⟩, IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3106836⟩, IEEE Journal of the Electron Devices Society, Vol 9, Pp 911-932 (2021)
Publication Year :
2021

Abstract

We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.

Details

Language :
English
ISSN :
21686734
Database :
OpenAIRE
Journal :
IEEE Journal of the Electron Devices Society, IEEE Journal of the Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3106836⟩, IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3106836⟩, IEEE Journal of the Electron Devices Society, Vol 9, Pp 911-932 (2021)
Accession number :
edsair.doi.dedup.....e59fc875cd5e1d4e39064c51938280f6