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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs
- Source :
- IEEE Journal of the Electron Devices Society, IEEE Journal of the Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3106836⟩, IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3106836⟩, IEEE Journal of the Electron Devices Society, Vol 9, Pp 911-932 (2021)
- Publication Year :
- 2021
-
Abstract
- We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
- Subjects :
- Materials science
business.industry
semiconductor device noise
Semiconductor device modeling
Thin film transistors
Hardware_PERFORMANCEANDRELIABILITY
Noise (electronics)
Capacitance
Domino
Electronic, Optical and Magnetic Materials
Threshold voltage
TK1-9971
Thin-film transistor
organic thin film transistors
Density of states
Optoelectronics
Electrical engineering. Electronics. Nuclear engineering
Electrical and Electronic Engineering
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
business
ComputingMilieux_MISCELLANEOUS
semiconductor device modeling
Biotechnology
Electronic circuit
Subjects
Details
- Language :
- English
- ISSN :
- 21686734
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of the Electron Devices Society, IEEE Journal of the Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3106836⟩, IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3106836⟩, IEEE Journal of the Electron Devices Society, Vol 9, Pp 911-932 (2021)
- Accession number :
- edsair.doi.dedup.....e59fc875cd5e1d4e39064c51938280f6