AL-O INTERACTIONS IN ION-IMPLANTED CRYSTALLINE SILICON

The formation and dissolution of Si‐O‐Al precipitates have been investigated in Czochralski silicon wafers implanted with 6 MeV Al ions and thermally processed. The data have been compared to the O precipitation in samples implanted with 6 MeV Si or P ions. The amount of precipitated O atoms is about one order of magnitude higher for Al than for Si or P implanted samples. Moreover, a strong gettering of the Al atoms by the silicon dioxide precipitates has been observed. The precipitate evolution has been studied for different annealing times and temperatures. The oxygen precipitation has been simulated by the classical theory of nucleation and growth, with the introduction of new factors that take into account the implant damage distribution, the agglomeration of point defects during the initial stages of the annealing and the oxygen outdiffusion from the sample surface.