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Vacancy-engineering implants for high boron activation in silicon on insulator

Authors :
Russell M. Gwilliam
B.J. Sealy
A. J. Smith
N.E.B. Cowern
Massimo Bersani
E.J.H. Collart
B. Colombeau
Damiano Giubertoni
S. Gennaro
Mario Barozzi
Publication Year :
2006
Publisher :
AMER INST PHYSICS, 2006.

Abstract

The formation of boron interstitial clusters is a key limiting factor for the fabrication of highly conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy engineering strongly reduces boron clustering, enabling low-temperature electrical activation to levels rivalling what can be achieved with conventional preamorphization and solid-phase epitaxial regrowth. An optimized 160keV silicon implant in a 55∕145nm silicon-on-insulator structure enables stable activation of a 500eV boron implant to a concentration ∼5×1020cm−3.

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....e76063c7b03dea8ce4ab965fbb01d507