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GaAs nanostructuring by self-organized stencil mask ion lithography

Authors :
Andrea Toma
F. Buatier de Mongeot
Corrado Boragno
Enge Wang
Z. Q. Zhang
Daniele Chiappe
Jiandong Guo
Source :
Journal of Applied Physics. 110:114321
Publication Year :
2011
Publisher :
AIP Publishing, 2011.

Abstract

We report on nanoscale patterning of GaAs (100) semiconductor substrates employing an ion projection through a self-organized stencil mask. The nanostructured mask, formed by ion beam sputtering of a polycrystalline Au film, allows driving the GaAs morphology strongly out of equilibrium. In a second stage, after the stencil mask is removed, we quantitatively follow the dynamical evolution of the forced system toward equilibrium by analyzing the evolution of the power spectral density of the height profiles and their slope and curvature distribution. Strong differences are observed by comparing the relaxation dynamics of GaAs surfaces which tend to smoothen with that of glass, a material which instead tends to non-linearly amplify the pattern once driven out of equilibrium by the stencil mask.

Details

ISSN :
10897550 and 00218979
Volume :
110
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi.dedup.....e8657e97c499632bf6d8413dce5275af
Full Text :
https://doi.org/10.1063/1.3665693