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GaAs nanostructuring by self-organized stencil mask ion lithography
- Source :
- Journal of Applied Physics. 110:114321
- Publication Year :
- 2011
- Publisher :
- AIP Publishing, 2011.
-
Abstract
- We report on nanoscale patterning of GaAs (100) semiconductor substrates employing an ion projection through a self-organized stencil mask. The nanostructured mask, formed by ion beam sputtering of a polycrystalline Au film, allows driving the GaAs morphology strongly out of equilibrium. In a second stage, after the stencil mask is removed, we quantitatively follow the dynamical evolution of the forced system toward equilibrium by analyzing the evolution of the power spectral density of the height profiles and their slope and curvature distribution. Strong differences are observed by comparing the relaxation dynamics of GaAs surfaces which tend to smoothen with that of glass, a material which instead tends to non-linearly amplify the pattern once driven out of equilibrium by the stencil mask.
- Subjects :
- Surface diffusion
Materials science
business.industry
General Physics and Astronomy
Nanotechnology
Sputter deposition
Fabrication and characterization of nanoscale materials
Ion beam lithography
Stencil
Condensed Matter::Materials Science
Semiconductor
Nanolithography
Optoelectronics
Stencil lithography
business
Lithography
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 110
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....e8657e97c499632bf6d8413dce5275af
- Full Text :
- https://doi.org/10.1063/1.3665693