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DC current induced metal-insulator transition in epitaxial Sm0.6Nd0.4NiO3/LaAlO3 thin film

Authors :
Yalin Lu
Yuanjun Yang
Haibo Wang
Chen Gao
Zhenlin Luo
Jun Bao
Haoliang Huang
Sixia Hu
Yu Yun
Dechao Meng
Mengmeng Yang
Source :
AIP Advances, Vol 4, Iss 5, Pp 057102-057102-6 (2014)
Publication Year :
2014
Publisher :
AIP Publishing LLC, 2014.

Abstract

The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm0.6Nd0.4NiO3 (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO3 substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The TMI of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 109 A•m−2 to 4.9 × 109 A•m−2. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.

Details

Language :
English
ISSN :
21583226
Volume :
4
Issue :
5
Database :
OpenAIRE
Journal :
AIP Advances
Accession number :
edsair.doi.dedup.....ea707bf530404f2335de78373c6f778c