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Indium oxide nanomesh-based electrolyte-gated synaptic transistors
- Source :
- Journal of Information Display, Vol 22, Iss 3, Pp 179-185 (2021)
- Publication Year :
- 2021
- Publisher :
- Taylor & Francis Group, 2021.
-
Abstract
- Based on the movement and accumulation of ions in the 1-ethyl-3-methylimidazolium dicyanamide ([EMIM]DCA) electrolyte under a positive gate bias, the electrical double layer (EDL) was formed between a nanomesh channel and the [EMIM]DCA electrolyte to contribute to the increase in the conductance of the channel. The basic functions of artificial synapses, such as excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), short-term plasticity (STP), and long-term plasticity (LTP), are realized successfully. Besides, the high-pass filter function was implemented, which shows the application potential of the device in signal processing.
- Subjects :
- Computer engineering. Computer hardware
Materials science
business.industry
synaptic transistor
Transistor
Oxide
chemistry.chemical_element
Electrolyte
law.invention
Ion
TK7885-7895
chemistry.chemical_compound
synaptic behavior
Nanomesh
chemistry
law
Optoelectronics
General Materials Science
indium oxide
high-pass filter
Electrical and Electronic Engineering
business
Dicyanamide
Indium
Subjects
Details
- Language :
- English
- ISSN :
- 21581606 and 15980316
- Volume :
- 22
- Issue :
- 3
- Database :
- OpenAIRE
- Journal :
- Journal of Information Display
- Accession number :
- edsair.doi.dedup.....ebd7db89c03ffe71376dc10ac635e75d