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Indium oxide nanomesh-based electrolyte-gated synaptic transistors

Authors :
Byung Ha Kang
Wei Qin
Jong Bin An
Hyun Jae Kim
Source :
Journal of Information Display, Vol 22, Iss 3, Pp 179-185 (2021)
Publication Year :
2021
Publisher :
Taylor & Francis Group, 2021.

Abstract

Based on the movement and accumulation of ions in the 1-ethyl-3-methylimidazolium dicyanamide ([EMIM]DCA) electrolyte under a positive gate bias, the electrical double layer (EDL) was formed between a nanomesh channel and the [EMIM]DCA electrolyte to contribute to the increase in the conductance of the channel. The basic functions of artificial synapses, such as excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), short-term plasticity (STP), and long-term plasticity (LTP), are realized successfully. Besides, the high-pass filter function was implemented, which shows the application potential of the device in signal processing.

Details

Language :
English
ISSN :
21581606 and 15980316
Volume :
22
Issue :
3
Database :
OpenAIRE
Journal :
Journal of Information Display
Accession number :
edsair.doi.dedup.....ebd7db89c03ffe71376dc10ac635e75d