Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates

Authors :: Andrea Martinelli
Stefano Sanguinetti
Alexey Fedorov
Luca Esposito
Sergio Bietti
Andrea Ballabio
Bietti, S
Esposito, L
Fedorov, A
Ballabio, A
Martinelli, A
Sanguinetti, S
Source :: Nanoscale research letters, info:cnr-pdr/source/autori:Bietti S.; Esposito L.; Fedorov A.; Ballabio A.; Martinelli A.; Sanguinetti S./titolo:Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates/doi:10.1186%2Fs11671-015-0930-3/rivista:Nanoscale research letters (Print)/anno:2015/pagina_da:/pagina_a:/intervallo_pagine:/volume:10, Nanoscale Research Letters
Publication Year :: 2015
Publisher :: Springer, New York, NY , Stati Uniti d'America, 2015.
Abstract: We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic force microscopy show that annealing process is able to change density and aspect ratio of InAs quantum dots and also to narrow size distribution.

Language :: English
Database :: OpenAIRE
Journal :: Nanoscale research letters, info:cnr-pdr/source/autori:Bietti S.; Esposito L.; Fedorov A.; Ballabio A.; Martinelli A.; Sanguinetti S./titolo:Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates/doi:10.1186%2Fs11671-015-0930-3/rivista:Nanoscale research letters (Print)/anno:2015/pagina_da:/pagina_a:/intervallo_pagine:/volume:10, Nanoscale Research Letters
Accession number :: edsair.doi.dedup.....eccfe13f6a329a23db3b4394f68e8348
Full Text :: https://doi.org/10.1186/s11671-015-0930-3

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