Efficient förster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures

We report on novel InGaN/GaN quantum well/polyfluorene heterostructures where efficient Förster energy transfer from the well to the organic layer occurs. We show that Mott-Wannier excitons dominate the quantum well luminescence in the quantum wells in the 77 to at least 225 K range and are responsible for the efficient energy channeling to the polyfluorene films. © 2007 American Institute of Physics. 893 355 356 Sponsors: Austrian Research Centers (ARCS) Infineon Austrian Fed. Minist. Educ., Sci. Cult. (BMBMWK) FFG Austrian Nano Initiative Cited By :1