Back to Search
Start Over
Origin of 1/ f noise in graphene produced for largeāscale applications in electronics
- Source :
- IET Circuits, Devices & Systems. 9:52-58
- Publication Year :
- 2015
- Publisher :
- Institution of Engineering and Technology (IET), 2015.
-
Abstract
- The authors report a detailed investigation of the flicker noise (1/f noise) in graphene films obtained from chemical vapour deposition (CVD) and chemical reduction of graphene oxide. The authors find that in the case of polycrystalline graphene films grown by CVD, the grain boundaries and other structural defects are the dominant source of noise by acting as charged trap centres resulting in huge increase in noise as compared with that of exfoliated graphene. A study of the kinetics of defects in hydrazine-reduced graphene oxide (RGO) films as a function of the extent of reduction showed that for longer hydrazine treatment time strong localised crystal defects are introduced in RGO, whereas the RGO with shorter hydrazine treatment showed the presence of large number of mobile defects leading to higher noise amplitude.
- Subjects :
- Materials science
Graphene
business.industry
Physics
Oxide
Materials Engineering (formerly Metallurgy)
Nanotechnology
Chemical vapor deposition
law.invention
chemistry.chemical_compound
chemistry
Control and Systems Engineering
law
Optoelectronics
Grain boundary
Flicker noise
Electrical and Electronic Engineering
business
Graphene nanoribbons
Noise (radio)
Graphene oxide paper
Subjects
Details
- ISSN :
- 17518598 and 1751858X
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- IET Circuits, Devices & Systems
- Accession number :
- edsair.doi.dedup.....eea26fd37eede8c2c1cceb92e4aa4f04