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Metal-semiconductor 1T/2H-MoS2 by a heteroatom-doping strategy for enhanced electrocatalytic hydrogen evolution

Authors :
Qingliang Feng
Weiyi Zheng
Yimin Jiang
Sihan Li
Fusheng Zhang
Liubin Zhao
Source :
Catalysis Communications, Vol 156, Iss, Pp 106325-(2021)
Publication Year :
2021
Publisher :
Elsevier, 2021.

Abstract

Complicated synthesis procedure and instability of 1T-MoS2 impede its practical application for hydrogen evolution reaction. Here, we propose a new strategy to drive the synthesis of stabilized 1T-MoS2 by Ni doping. Ni doping forms the Ni S covalent bonds, inducing the slip of S atoms and stabilizing 1T structure. The materials were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Electrochemical tests including linear sweep voltammetry etc. indicate that the 1T/2H-MoS2/8%Ni has an overpotential of 162 mV and a Tafel slope of 80 mV dec−1 along with a good stability.

Details

Language :
English
ISSN :
18733905
Volume :
156
Database :
OpenAIRE
Journal :
Catalysis Communications
Accession number :
edsair.doi.dedup.....effb39792b123744b270480b91a9251f