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Metal-semiconductor 1T/2H-MoS2 by a heteroatom-doping strategy for enhanced electrocatalytic hydrogen evolution
- Source :
- Catalysis Communications, Vol 156, Iss, Pp 106325-(2021)
- Publication Year :
- 2021
- Publisher :
- Elsevier, 2021.
-
Abstract
- Complicated synthesis procedure and instability of 1T-MoS2 impede its practical application for hydrogen evolution reaction. Here, we propose a new strategy to drive the synthesis of stabilized 1T-MoS2 by Ni doping. Ni doping forms the Ni S covalent bonds, inducing the slip of S atoms and stabilizing 1T structure. The materials were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Electrochemical tests including linear sweep voltammetry etc. indicate that the 1T/2H-MoS2/8%Ni has an overpotential of 162 mV and a Tafel slope of 80 mV dec−1 along with a good stability.
- Subjects :
- Tafel equation
Materials science
Mixed-phase MoS2
010405 organic chemistry
Process Chemistry and Technology
Heteroatom
Doping
Electrocatalysts
General Chemistry
Overpotential
010402 general chemistry
Hydrogen generation
01 natural sciences
Catalysis
0104 chemical sciences
symbols.namesake
Chemistry
X-ray photoelectron spectroscopy
Covalent bond
Linear sweep voltammetry
symbols
Physical chemistry
Raman spectroscopy
Ni doping
QD1-999
Subjects
Details
- Language :
- English
- ISSN :
- 18733905
- Volume :
- 156
- Database :
- OpenAIRE
- Journal :
- Catalysis Communications
- Accession number :
- edsair.doi.dedup.....effb39792b123744b270480b91a9251f