SPATIAL SPECTRAL ANALYSIS IN HIGH BRIGHTNESS <font>GaInN/GaN</font> LIGHT EMITTING DIODES

Authors :: Mingwei Zhu
J. Senawiratne
Y. Li
Christian Wetzel
Erdmann Frederick Schubert
Y. Xi
W. Zhao
Theeradetch Detchprohm
Y. Xia
Source :: International Journal of High Speed Electronics and Systems. 17:29-33
Publication Year :: 2007
Publisher :: World Scientific Pub Co Pte Lt, 2007.
Abstract: We analyze GaInN based light emitting diodes emitting in the range of 400-550nm using a new intensity-quantitative spectroscopic cathodoluminescence mapping method. Spectroscopic information of arbitrary sample locations is generated from sequences of quantitative image scans. From the temperature dependence of the intensity, we derive thermal activation energies of the dominant loss processes. Those compare well with the hole binding energies in the piezoelectric and quantized quantum well structures.

Subjects :: Brightness
Materials science
business.industry
Binding energy
Cathodoluminescence
Electroluminescence
Piezoelectricity
law.invention
Electronic, Optical and Magnetic Materials
Optics
law
Hardware and Architecture
Thermal
Optoelectronics
Electrical and Electronic Engineering
business
Quantum well
Light-emitting diode

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