High temperature single photon emitter monolithically integrated on silicon

Authors :: L. Cavigli
1 S. Bietti
2 N. Accanto
1 S. Minari
1 M. Abbarchi
1 G. Isella
3 C. Frigeri
4 A. Vinattieri
1 M. Gurioli
1
S. Sanguinetti2
Cavigli, L
Bietti, S
Accanto, N
Minari, S
Abbarchi, M
Isella, G
Frigeri, C
Vinattieri, A
Gurioli, M
Sanguinetti, S
Source :: Applied physics letters (Online) 100 (2012): 231112. doi:10.1063/1.4726189, info:cnr-pdr/source/autori:L. Cavigli,1 S. Bietti,2 N. Accanto,1 S. Minari,1 M. Abbarchi,1 G. Isella,3 C. Frigeri,4 A. Vinattieri,1 M. Gurioli,1 and S. Sanguinetti2/titolo:High temperature single photon emitter monolithically integrated on silicon/doi:10.1063%2F1.4726189/rivista:Applied physics letters (Online)/anno:2012/pagina_da:231112/pagina_a:/intervallo_pagine:231112/volume:100
Publication Year :: 2012
Publisher :: American Institute of Physics, 2012.
Abstract: We report on triggered single photon emission from GaAs quantum dots, grown on Si substrates and obtained by means of fabrication protocols compatible with the monolithic integration on Si based microelectronics. Very bright and sharp individual exciton lines are resolved in the spectra and can be followed up to 150 K. The nature of quantum emitters of single photon pulses can be measured up to liquid nitrogen temperature by Hanbury Brown and Twiss interferometric correlations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726189]

Language :: English
Database :: OpenAIRE
Journal :: Applied physics letters (Online) 100 (2012): 231112. doi:10.1063/1.4726189, info:cnr-pdr/source/autori:L. Cavigli,1 S. Bietti,2 N. Accanto,1 S. Minari,1 M. Abbarchi,1 G. Isella,3 C. Frigeri,4 A. Vinattieri,1 M. Gurioli,1 and S. Sanguinetti2/titolo:High temperature single photon emitter monolithically integrated on silicon/doi:10.1063%2F1.4726189/rivista:Applied physics letters (Online)/anno:2012/pagina_da:231112/pagina_a:/intervallo_pagine:231112/volume:100
Accession number :: edsair.doi.dedup.....f0eaac07de8f2caf5d56d50a78eeed17
Full Text :: https://doi.org/10.1063/1.4726189