An Electrothermal Compact Model for SiC MOSFETs Based on SPICE Primitives with Improved Description of the JFET Resistance

Authors :: Borghese A.
Riccio M.
Maresca L.
Breglio G.
Irace A.
Borghese, A.
Riccio, M.
Maresca, L.
Breglio, G.
Irace, A.
Source :: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Publication Year :: 2022
Publisher :: IEEE, 2022.
Abstract: This manuscript introduces a compact electrothermal model for SiC power MOSFETs that can be easily scaled to devices of different voltage ratings. The model is implemented as a subcircuit containing mainly SPICE native components. Both the static and dynamic performance can be tuned by adjusting a small set of parameters. The model is validated on 1.7 kV-60 A-rated devices.

Subjects :: Compact modeling
Electrothermal simulation
SiC MOSFET
TCAD simulation

Database :: OpenAIRE
Journal :: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Accession number :: edsair.doi.dedup.....f117b88abc8eb9a98c2e1a7cc61c7271

Tools