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Chasing the killer phonon mode for the rational design of low disorder, high mobility molecular semiconductors

Authors :
Jeff Armstrong
David Harkin
Alan R. Kennedy
J. Axel Zeitler
Katharina Broch
Kazuo Takimiya
Christian Ruzié
Yves Geerts
Guoming Liu
Michael T. Ruggiero
Deepak Venkateshvaran
Audrey Richard
Gabriele D'Avino
Guillaume Schweicher
Simone Fratini
Kenneth Shankland
Henning Sirringhaus
Cavendish Laboratory
University of Cambridge [UK] (CAM)
Théorie de la Matière Condensée (TMC )
Institut Néel (NEEL)
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Université libre de Bruxelles (ULB)
ISIS Facility
STFC Rutherford Appleton Laboratory (RAL)
Science and Technology Facilities Council (STFC)-Science and Technology Facilities Council (STFC)
University of Strathclyde [Glasgow]
University of Reading (UOR)
Laboratoire de Chimie des Polymères
Schweicher, Guilaume [0000-0002-6501-0790]
Venkateshvaran, Deepak [0000-0002-7099-7323]
Zeitler, Axel [0000-0002-4958-0582]
Sirringhaus, Henning [0000-0001-9827-6061]
Apollo - University of Cambridge Repository
Source :
Advanced Materials, Advanced Materials, Wiley-VCH Verlag, 2019, 31 (43), pp.1902407. ⟨10.1002/adma.201902407⟩, Advanced materials, 31 (43
Publication Year :
2019
Publisher :
arXiv, 2019.

Abstract

Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron – phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high mobility molecular semiconductors, we have combined state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron phonon coupling constants with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way we have been able to identify the long-axis sliding motion as a ‘killer’ phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, we propose a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high mobility molecular semiconductors.<br />Royal Society German Research Foundation European Research Council Engineering and Physical Sciences Research Council ARCHER UK National Supercomputing Service Belgian National Fund for Scientific Research Leverhulme Trust Wiener-Anspach Foundation Belgian Walloon Region GENCI-CINES/IDRIS

Details

ISSN :
09359648 and 15214095
Database :
OpenAIRE
Journal :
Advanced Materials, Advanced Materials, Wiley-VCH Verlag, 2019, 31 (43), pp.1902407. ⟨10.1002/adma.201902407⟩, Advanced materials, 31 (43
Accession number :
edsair.doi.dedup.....f2a446545e76dea650c48550c0ae9c6c
Full Text :
https://doi.org/10.48550/arxiv.1903.10852