Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes

The origins of the nonlinear and asymmetric synaptic characteristics of TiO x -based synapse devices were investigated. Based on the origins, a microstructural electrode was utilized to improve the synaptic characteristics. Under an identical pulse bias, a TiO x -based synapse device exhibited saturated conductance changes, which led to nonlinear and asymmetric synaptic characteristics. The formation of an interfacial layer between the electrode and TiO x layer, which can limit consecutive oxygen migration and chemical reactions, was considered as the main origin of the conductance saturation behavior. To achieve consecutive oxygen migration and chemical reactions, structural engineering was utilized. The resultant microstructural electrode noticeably improved the synaptic characteristics, including the unsaturated, linear, and symmetric conductance changes. These synaptic characteristics resulted in the recognition accuracy significantly increasing from 38% to 90% in a neural network-based pattern recognition simulation.