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Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
- Source :
- Nanoscale Research Letters
- Publisher :
- Springer Nature
-
Abstract
- The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.
- Subjects :
- X ray photoemission
Materials science
Nano Express
Photoemission spectroscopy
business.industry
Nanochemistry
Heterojunction
GaN/AlN
Condensed Matter Physics
Piezoelectricity
Non-polar
Materials Science(all)
Strain effect
Heterostructure
Optoelectronics
General Materials Science
Non polar
X-ray photoemission spectroscopy
business
Spectroscopy
Subjects
Details
- Language :
- English
- ISSN :
- 1556276X
- Volume :
- 9
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- Nanoscale Research Letters
- Accession number :
- edsair.doi.dedup.....f5c3c043f0076f2b32cf2e34a06b7071
- Full Text :
- https://doi.org/10.1186/1556-276x-9-470