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Enhanced coupling effects in vertical double-gate FinFETs
- Source :
- Solid-State Electronics, Solid-State Electronics, Elsevier, 2014, 97, pp.88-98. ⟨10.1016/j.sse.2014.04.024⟩, Solid-State Electronics, 2014, 97, pp.88-98. ⟨10.1016/j.sse.2014.04.024⟩
- Publication Year :
- 2014
- Publisher :
- HAL CCSD, 2014.
-
Abstract
- International audience; Vertical double-gate (DG) FinFETs fabricated on SOI wafers show good gate control, reasonable threshold voltage and high carrier mobility despite the absence of the top-gate. The 3D coupling effect between the two lateral-gates and the back-gate is investigated based on experimental and simulation results. We compare DG and triple-gate FinFETs with various fin widths. Front-channel characteristics are easily tuned by applied bias at the back-gate if the fin is not too narrow. We highlight that vertical DG FinFET is more appropriate device for dynamic threshold voltage adjustment than triple-gate FinFET. An analytical model is proposed to quantify the coupling effect in DG FinFET by solving 2D Poisson equation. The body potential profile and coupling effect are modeled. A very good agreement is obtained between experiments, 3D simulations and the proposed model.
- Subjects :
- Electron mobility
Materials science
Silicon on insulator
02 engineering and technology
01 natural sciences
Fin (extended surface)
Computer Science::Hardware Architecture
Computer Science::Emerging Technologies
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Materials Chemistry
Electronic engineering
Wafer
Electrical and Electronic Engineering
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Coupling Back-bias scheme Model
010302 applied physics
Coupling
Double-gate SOI
business.industry
020208 electrical & electronic engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Threshold voltage
FinFET
Optoelectronics
Double gate
Poisson's equation
business
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics, Solid-State Electronics, Elsevier, 2014, 97, pp.88-98. ⟨10.1016/j.sse.2014.04.024⟩, Solid-State Electronics, 2014, 97, pp.88-98. ⟨10.1016/j.sse.2014.04.024⟩
- Accession number :
- edsair.doi.dedup.....f70f9d2a2f5a5d5a2f49fd7cc1cb2ae9
- Full Text :
- https://doi.org/10.1016/j.sse.2014.04.024⟩