Back to Search
Start Over
Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon
- Publication Year :
- 2019
- Publisher :
- AIP Publishing, 2019.
-
Abstract
- This study reports the effect of an increasing ion dose on both the electrical activation yield and the characteristic properties of implanted bismuth donors in silicon. A strong dependence of implant fluence is observed on both the yield of bismuth donors and the measured impurity diffusion. This is such that higher ion concentrations result in both a decrease in activation and an enhancement in donor migration through interactions with mobile silicon lattice vacancies and interstitials. Furthermore, the effect of implant fluence on the properties of the Si:Bi donor bound exciton, D0X, is also explored using photoluminescence (PL) measurements. In the highest density sample, centers corresponding to the PL of bismuth D0Xs within both the high density region and the lower concentration diffused tail of the implanted donor profile are identifiable.
- Subjects :
- 010302 applied physics
Photoluminescence
Materials science
Physics and Astronomy (miscellaneous)
Silicon
Exciton
Analytical chemistry
chemistry.chemical_element
High density
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Fluence
Bismuth
Ion
chemistry
Impurity diffusion
0103 physical sciences
0210 nano-technology
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....f9011af61a9a6958bcc38251f377cfd1