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Semiconducting α′-boron sheet with high mobility and low all-boron contact resistance: a first-principles study
- Source :
- Nanoscale.
- Publication Year :
- 2021
- Publisher :
- Royal Society of Chemistry (RSC), 2021.
-
Abstract
- Two-dimensional field effect transistors (2D FETs) with high mobility semiconducting channels and low contact resistance between the semiconducting channel and the metallic electrodes are highly sought components of future electronics. Recently, 2D boron sheets (borophene) offer a great platform for realizing ideal 2D FETs but stable semiconducting phases still remain much unexplored. Herein, based on first-principles calculations and tight-binding model, we first clarify that α'-boron is the most stable semiconductor phase of boron sheets, while reveal the mechanism of metal-to-semiconductor transition from α- to α'-boron. Then we demonstrate that the carrier mobility in α'- and metastable β3S-boron should be very high, due to small effective masses of electrons and holes, as a good candidate material for 2D FETs. Considering further the lateral contacts between semiconducting α' and metallic borophene, we find that the α'- and β3S-boron sheet can form Ohmic contacts with selected metallic boron sheets, without Schottky barrier. The high energetic stability and excellent mobility properties of α'-boron sheet together with its good contact match to metallic borophene electrodes are promising for fully boron-based FETs in the real 2D atomically thin limit.
- Subjects :
- Electron mobility
Materials science
business.industry
Schottky barrier
Contact resistance
chemistry.chemical_element
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Semiconductor
chemistry
Borophene
Optoelectronics
General Materials Science
Field-effect transistor
0210 nano-technology
business
Boron
Ohmic contact
Subjects
Details
- ISSN :
- 20403372 and 20403364
- Database :
- OpenAIRE
- Journal :
- Nanoscale
- Accession number :
- edsair.doi.dedup.....f926086aba26a0efb5421ee81172e7c8