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Enhanced Room Temperature Magnetoresistance and Spin Injection from Metallic Cobalt in Co/ZnO and Co/ZnAlO Films
- Source :
- ACS Applied Materials & Interfaces. 5:3607-3613
- Publication Year :
- 2013
- Publisher :
- American Chemical Society (ACS), 2013.
-
Abstract
- Co/ZnO and Co/ZnAlO films were prepared by depositing ultrathin cobalt layers and semiconductor layers on glass substrates at room temperature. The films consist of metallic Co particles, semiconductor matrix, and an interfacial magnetic semiconductor with the substitution of Co(2+) for Zn(2+) in the ZnO lattice at the interface between Co particles and the semiconductor matrix. Large room temperature negative tunneling magnetoresistance was observed in the films. In addition, the magnetism and magnetoresistance were obviously enhanced by adding aluminum to the ZnO, and in one Co/ZnAlO sample, the room temperature negative magnetoresistance value reaches -12.3% at 18 kOe (compared with -8.4% of the corresponding Co/ZnO film) and the spin polarization of the tunneling electrons is about 37.5% which is characteristic of metallic Co. This enhancement of the tunneling spin polarization has been ascribed to the tunneling through an interfacial magnetic semiconductor, which causes the robust spin injection from cobalt metal into the semiconductors at room temperature resulting from the spin filter effect of the interfacial magnetic semiconductors.
- Subjects :
- Materials science
Spin polarization
Magnetoresistance
Condensed matter physics
Condensed Matter::Other
business.industry
Magnetism
Metallurgy
chemistry.chemical_element
Magnetic semiconductor
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
Semiconductor
chemistry
Sputtering
Condensed Matter::Superconductivity
Condensed Matter::Strongly Correlated Electrons
General Materials Science
business
Cobalt
Quantum tunnelling
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 5
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi.dedup.....fa39f2c4c44f95d606d5f2f283c01270