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Colossal tunneling electroresistance in co-planar polymer ferroelectric tunnel junctions
- Source :
- Advanced Electronic Materials
- Publication Year :
- 2020
-
Abstract
- Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by
- Subjects :
- chemistry.chemical_classification
Materials science
Foundation (engineering)
Piezoelectric force microscopy
02 engineering and technology
Polymer
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Engineering physics
Ferroelectricity
0104 chemical sciences
Electronic, Optical and Magnetic Materials
Technical support
Planar
chemistry
0210 nano-technology
Quantum tunnelling
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Advanced Electronic Materials
- Accession number :
- edsair.doi.dedup.....fa3e903b9a6cc5ddaec32c710019b2de