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Low-Pressure Vapor-Assisted Solution Process for Thiocyanate-Based Pseudohalide Perovskite Solar Cells
- Source :
- ChemSusChem. 9:2620-2627
- Publication Year :
- 2016
- Publisher :
- Wiley, 2016.
-
Abstract
- In this report, we fabricated thiocyanate-based perovskite solar cells with low-pressure vapor-assisted solution process (LP-VASP) method. Photovoltaic performances are evaluated with detailed materials characterizations. Scanning electron microscopy images show that SCN-based perovskite films fabricated using LP-VASP have long-range uniform morphology and large grain sizes up to 1 μm. The XRD and Raman spectra were employed to observe the characteristic peaks for both SCN-based and pure CH3NH3PbI3 perovskite. We observed that the Pb(SCN)2 film transformed to PbI2 before the formation of perovskite film. X-ray photoemission spectra (XPS) show that only a small amount of S remained in the film. Using LP-VASP method, we fabricated SCN-based perovskite solar cells and achieved a power conversion efficiency of 12.72 %. It is worth noting that the price of Pb(SCN)2 is only 4 % of PbI2. These results demonstrate that pseudo-halide perovskites are promising materials for fabricating low-cost perovskite solar cells.
- Subjects :
- Materials science
Surface Properties
Scanning electron microscope
General Chemical Engineering
Analytical chemistry
Mineralogy
02 engineering and technology
Chemical vapor deposition
010402 general chemistry
01 natural sciences
chemistry.chemical_compound
symbols.namesake
Electric Power Supplies
X-ray photoelectron spectroscopy
Pressure
Solar Energy
Environmental Chemistry
General Materials Science
Solution process
Perovskite (structure)
Titanium
Thiocyanate
business.industry
Oxides
Calcium Compounds
021001 nanoscience & nanotechnology
Solar energy
0104 chemical sciences
Solutions
General Energy
chemistry
symbols
Volatilization
0210 nano-technology
business
Raman spectroscopy
Thiocyanates
Subjects
Details
- ISSN :
- 18645631
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- ChemSusChem
- Accession number :
- edsair.doi.dedup.....fa95253f50bf3d08c677f54af3e4bdb5