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Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD

Authors :
Urban Forsberg
Per-Olof Holtz
Chih-Wei Hsu
Daniel Nilsson
Karl Fredrik Karlsson
Anders Lundskog
Erik Janzén
Publication Year :
2013
Publisher :
Linköpings universitet, Halvledarmaterial, 2013.

Abstract

Hexagonal GaN pyramids have been fabricated by hot-wall metal organic chemical vapor deposition (hot-wall MOCVD) and the growth evolution have been studied. It was concluded that the pyramid growth can be divided into two regimes separated by the adsorption kinetics of the {1101} surfaces of the pyramids. In the adsorption regime, the pyramids grow simultaneously in the and [0001] -directions. In the zero-adsorption regime the pyramids grow only in the [0001] direction. Thus the pyramid growth ceases when the (0001) facet growth has been terminated. Large arrays consisting of highly uniform pyramids with apex radii of 3 nm or less were achieved in the zeroadsorption regime. The growth-regime type was concluded to have a large impact on the uniformity degradation of the pyramids, and their optical properties. The impacts of threading dislocations which enter the pyramid from underneath are also discussed.

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....fc04b88efeaa2532fcd753c2f0a15574