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Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
- Publication Year :
- 2013
- Publisher :
- Linköpings universitet, Halvledarmaterial, 2013.
-
Abstract
- Hexagonal GaN pyramids have been fabricated by hot-wall metal organic chemical vapor deposition (hot-wall MOCVD) and the growth evolution have been studied. It was concluded that the pyramid growth can be divided into two regimes separated by the adsorption kinetics of the {1101} surfaces of the pyramids. In the adsorption regime, the pyramids grow simultaneously in the and [0001] -directions. In the zero-adsorption regime the pyramids grow only in the [0001] direction. Thus the pyramid growth ceases when the (0001) facet growth has been terminated. Large arrays consisting of highly uniform pyramids with apex radii of 3 nm or less were achieved in the zeroadsorption regime. The growth-regime type was concluded to have a large impact on the uniformity degradation of the pyramids, and their optical properties. The impacts of threading dislocations which enter the pyramid from underneath are also discussed.
- Subjects :
- Materials science
genetic structures
business.industry
Hexagonal crystal system
A3. Hot wall epitaxy A3. Metalorganic vapor phase epitaxy A3. Selective epitaxy B1. Nitrides
technology, industry, and agriculture
food and beverages
Nanotechnology
Chemical vapor deposition
Condensed Matter Physics
Inorganic Chemistry
Metal
visual_art
Pyramid
Naturvetenskap
Materials Chemistry
visual_art.visual_art_medium
Optoelectronics
Metalorganic vapour phase epitaxy
business
Natural Sciences
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....fc04b88efeaa2532fcd753c2f0a15574