Cite
Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure
MLA
Sungjoo Song, et al. “Effective Schottky Barrier Height and Interface Trap Density Reduction Engineering Using 2-Dimensional Reduced Graphene Oxide Interlayer for Metal-Interlayer-Semiconductor Contact Structure.” Journal of Alloys and Compounds, vol. 937, Mar. 2023, p. 168327. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....fc14e36f4fa67027774e9c010675e237&authtype=sso&custid=ns315887.
APA
Sungjoo Song, Seung-Hwan Kim, Seung-Geun Kim, Kyu-Hyun Han, Hyung-jun Kim, & Hyun-Yong Yu. (2023). Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure. Journal of Alloys and Compounds, 937, 168327.
Chicago
Sungjoo Song, Seung-Hwan Kim, Seung-Geun Kim, Kyu-Hyun Han, Hyung-jun Kim, and Hyun-Yong Yu. 2023. “Effective Schottky Barrier Height and Interface Trap Density Reduction Engineering Using 2-Dimensional Reduced Graphene Oxide Interlayer for Metal-Interlayer-Semiconductor Contact Structure.” Journal of Alloys and Compounds 937 (March): 168327. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....fc14e36f4fa67027774e9c010675e237&authtype=sso&custid=ns315887.