Hole Doping Effects on Physical Properties of the Layered Antiferromagnetic Insulator (LaO)MnPn (Pn=P, As, Sb)

MLA

Atsushi Higashiya, et al. “Hole Doping Effects on Physical Properties of the Layered Antiferromagnetic Insulator (LaO)MnPn (Pn=P, As, Sb).” Physics Procedia, vol. 75, Jan. 2015, pp. 455–59. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....fca63157ce8c8f1091abf0d8970fbfd3&authtype=sso&custid=ns315887.

APA

Atsushi Higashiya, Shin Imada, Kouichi Takase, Toshiharu Kadono, & Akito Naito. (2015). Hole Doping Effects on Physical Properties of the Layered Antiferromagnetic Insulator (LaO)MnPn (Pn=P, As, Sb). Physics Procedia, 75, 455–459.

Chicago

Atsushi Higashiya, Shin Imada, Kouichi Takase, Toshiharu Kadono, and Akito Naito. 2015. “Hole Doping Effects on Physical Properties of the Layered Antiferromagnetic Insulator (LaO)MnPn (Pn=P, As, Sb).” Physics Procedia 75 (January): 455–59. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....fca63157ce8c8f1091abf0d8970fbfd3&authtype=sso&custid=ns315887.