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HR-STEM investigation of atomic lattice defects in different types of η precipitates in creep-age forming Al–Zn–Mg–Cu aluminium alloy

Authors :
Makoto Shiojiri
Cheng-Ling Tai
Yo-Lun Yang
Hsueh-Ren Chena
Tsai-Fu Chung
Cheng-Si Tsao
Chien-Nan Hsiao
Jer-Ren Yang
Wei-Chih Li
Jianguo Lin
Zhusheng Shi
Engineering & Physical Science Research Council (E
Source :
Materials Science and Engineering: A. 815:141213
Publication Year :
2021
Publisher :
Elsevier BV, 2021.

Abstract

High-resolution (HR) high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) has revealed the atomic lattice defects in different types of η precipitates in the Al–Zn–Mg–Cu aluminium alloy subjected to creep-age forming treatment (with a constant stress lower than its room-temperature yield strength during ageing). Along the zone axes of [110]Al//[2 1 ‾ 1 ‾ 0]η of η1 and η12, [112]Al//[2 1 ‾ 1 ‾ 0]η of η2 and [100]Al//[2 1 ‾ 1 ‾ 0]η of η13, atomic projections of (2 1 ‾ 1 ‾ 0)η have been investigated. In those types of η, elongated hexagonal lattice defects (labelled as Type I defects) can be found; they are apparently related to local disorder in atomic stackings. Furthermore, in η12, elongated hexagonal lattice defects with a much higher aspect ratio (labelled as Type II defects) are uniquely observed. These atomic lattice defects are presumably pertinent to the lattice accommodation in the course of creep-age forming. Additionally, in η1 and η12, the features of a Penrose tiling defect connecting with Type I defects are observed, and these complex defects obviously affect the growth direction of the precipitate, resulting in a nearly spherical morphology. Alternatively, several entirely-passed faulted layers in a new type of precipitate, η14, consequently bring about a new orientation relationship: (51 3 ‾ )Al//(0001)η14 and [112]Al//[2 1 ‾ 1 ‾ 0]η14. Moreover, in an atomic STEM image of η14, the significant Z-contrast gradient adjacent to the transformation front of η14 elucidates the Zn/Cu diffusion from the matrix to the precipitate along {1 1 ‾ 1 ‾ }Al planes at the interface.

Details

ISSN :
09215093
Volume :
815
Database :
OpenAIRE
Journal :
Materials Science and Engineering: A
Accession number :
edsair.doi.dedup.....fe22f7f3b33286aa4247df881ac1b297