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Electromechanical transconductance properties of a GaN MEMS resonator with fully integrated HEMT transducers
- Source :
- Journal of Microelectromechanical Systems, Journal of Microelectromechanical Systems, 2012, 21, pp.370-378. ⟨10.1109/JMEMS.2011.2179010⟩, Journal of Microelectromechanical Systems, Institute of Electrical and Electronics Engineers, 2012, 21, pp.370-378. ⟨10.1109/JMEMS.2011.2179010⟩
- Publication Year :
- 2012
- Publisher :
- HAL CCSD, 2012.
-
Abstract
- We investigate the response of a GaN microelectromechanical resonator where the strain detection is performed by a resonant high-electron mobility transistor (R-HEMT). The R-HEMT gate located above the 2-DEG (two-dimensional electron gas) appears to enable a strong control of the electromechanical response with a gate voltage dependence close to a transconductance pattern. A quantitative approach based on the mobility of the carriers induced in the device by the piezoelectric response of the GaN buffer is proposed. These results show for the first time the electromechanical transconductance dependence versus external biasing and confirm that active piezoelectric transduction is governed by the AlGaN/GaN 2-DEG transport properties.
- Subjects :
- 010302 applied physics
Microelectromechanical systems
Materials science
business.industry
Mechanical Engineering
Transconductance
Transistor
Electrical engineering
Gallium nitride
Biasing
02 engineering and technology
High-electron-mobility transistor
021001 nanoscience & nanotechnology
01 natural sciences
Piezoelectricity
law.invention
chemistry.chemical_compound
Resonator
chemistry
law
0103 physical sciences
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
Subjects
Details
- Language :
- English
- ISSN :
- 10577157
- Database :
- OpenAIRE
- Journal :
- Journal of Microelectromechanical Systems, Journal of Microelectromechanical Systems, 2012, 21, pp.370-378. ⟨10.1109/JMEMS.2011.2179010⟩, Journal of Microelectromechanical Systems, Institute of Electrical and Electronics Engineers, 2012, 21, pp.370-378. ⟨10.1109/JMEMS.2011.2179010⟩
- Accession number :
- edsair.doi.dedup.....fe4ccc8483dd7b6e6340b66b7c3fdf73