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Insight into carrier lifetime impact on band-modulation devices
- Source :
- Solid-State Electronics, Solid-State Electronics, Elsevier, 2018, 143, pp.41-48. ⟨10.1016/j.sse.2017.12.007⟩, Solid-State Electronics, 2018, 143, pp.41-48. ⟨10.1016/j.sse.2017.12.007⟩
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Abstract
- International audience; A systematic study to model and characterize the band-modulation Z2-FET device is developed bringing light to the relevance of the carrier lifetime influence. This work provides guidelines to optimize the Z2-FETs for sharp switching, ESD protection, and 1T-DRAM applications. Lower carrier lifetime in the Z2-FET helps in attaining the sharp switch. We provide new insights into the correlation between generation/recombination, diffusion, electrostatic barriers and carrier lifetime.
- Subjects :
- Materials science
Carrier lifetime
Silicon on insulator
Z2-FET
02 engineering and technology
01 natural sciences
Generation-recombination
Diffusion
0103 physical sciences
Materials Chemistry
Electrical and Electronic Engineering
Diffusion (business)
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
010302 applied physics
SOI
business.industry
Hysteresis
021001 nanoscience & nanotechnology
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Modulation
Band modulation
Optoelectronics
0210 nano-technology
business
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 143
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi.dedup.....fece3717f934425bbd9d6d589ff26f52
- Full Text :
- https://doi.org/10.1016/j.sse.2017.12.007