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SiC-MOSFETデバイスモデルによる高周波漏洩電流の解析

Authors :
Matsuo, Tsubasa
Konno, Kentarou
Kuzumoto, Masaki
Hagiwara, Makoto
Akagi, Hirofumi
Mukunoki, Yasushige
Horiguchi, Takeshi
Publication Year :
2018

Details

Language :
Japanese
Database :
OpenAIRE
Accession number :
edsair.jairo.........32c5856f59c2f9b09ed22b8b9d21606d

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