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Compact Equivalent-Circuit Model for Snap-Back Phenomena in Ultra-Thin SOI MOSFET's and Practical Guideline for ESD-Protection Device Design
- Source :
- 関西大学工学研究報告 = Technology reports of the Kansai University. 49:11-18
- Publication Year :
- 2007
- Publisher :
- 関西大学工学部, 2007.
-
Abstract
- This paper proposes a compact equivalent-circuit model for the snap-back phenomenon in ultra-thin SOI MOSFET's. The model can be used in simulations of I/O circuits with ESD-protection devices. The model is more simple than past models, but it successfully reproduces the snap-back response. With the aid of many simulations, we propose a guideline for snap-back SOI MOSFET device design. Useful parameter-sensitivity equations for device characteristics are given for practical device designs.
Details
- Language :
- English
- ISSN :
- 04532198
- Volume :
- 49
- Database :
- OpenAIRE
- Journal :
- 関西大学工学研究報告 = Technology reports of the Kansai University
- Accession number :
- edsair.jairo.........6ea5eaef5646d713111e54b57279b715