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An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation
- Source :
- IEEE Transactions on Power Electronics. 33(No. 11):9834-9842
- Publication Year :
- 2018
Details
- Language :
- English
- Volume :
- 33
- Issue :
- No. 11
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Power Electronics
- Accession number :
- edsair.jairo.........6f05be340fc8a3b7353f89b1ba925ce1