Observation of Single Photon Sources in Silicon Carbide PiN Diodes

In-plain pi(n-)n diodes were fabricated on n-type epitaxial 4H-SiC layer grown on a n-type 4H-SiC substrate. As a result of confocal photoluminescence measurements, two types of single photon sources were observed in n-type region of 4H-SiC pin diodes
International Union of Materials Research Societies, The 15th International Conference on Advanced Materials (IUMRS-ICAM2017)