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高温窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価

Authors :
Ishiguro, Akio
Yamada, Yasuyuki
Hino, Shiro
Miura, Naruhisa
Oomori, Tatsuo
TOKUMITSU, EISUKE
Publication Year :
2011

Details

Language :
Japanese
Database :
OpenAIRE
Accession number :
edsair.jairo.........c60c4604562ed6ce6e62a3460bf3a83a

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