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Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer

Authors :
Hattori, T
Yoshida, T
Shiraishi, T
Takahashi, K
Nohira, H
Joumori, S
Nakajima, K
Suzuki, M
Kimura, K
Kashiwagi, I
Ohshima, C
Ohmi, S
Iwai, H
Source :
MICROELECTRONIC ENGINEERING. 72(1-4):283-287
Publication Year :
2004
Publisher :
ELSEVIER SCIENCE BV, 2004.

Subjects

Subjects :
depth profiling
Rutherford back scattering
photoelectron spectroscopy
high-k dielectrics
electronic band structures

Details

Language :
English
ISSN :
01679317
Volume :
72
Issue :
1-4
Database :
OpenAIRE
Journal :
MICROELECTRONIC ENGINEERING
Accession number :
edsair.jairo.........fc6d70796e386321e230358a2566a657

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