Back to Search
Start Over
Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
- Publication Year :
- 2018
- Publisher :
- Humboldt-Universität zu Berlin, 2018.
-
Abstract
- An InGaAs quantum dot (QD) photodetector is directly grown on a silicon substrate. GaAs-on-Si virtual substrates with a defect density in the order of 106 cm−2 are fabricated by using strained-layer superlattice as dislocation filters. As a result of the high quality virtual substrate, fabrication of QD layer with good structural properties has been achieved, as evidenced by transmission electron microscopy and x-ray diffraction measurements. The InGaAs QD infrared photodetector is then fabricated on the GaAs-on-Si wafer substrate. Dual-band photoresponse is observed at 80 K with two response peaks around 6 and 15 μm. Engineering and Physical Sciences Research Council https://doi.org/10.13039/501100000266 Royal Academy of Engineering https://doi.org/10.13039/501100000287 National Science Foundation of the U.S.
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.od.......133..2adeafbbe13809876be3a3cb8dd559c2