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Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)
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Abstract
- The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt current switching.
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.od.......185..12e1c66c343f0667c4e9d399f375711e