Simulation of the boron build-up formation during melting laser thermal annealing

In this work, we present a model describing the boron redistribution during laser thermal annealing in the melting regime based on the adsorption of boron atoms at the solid-liquid interface. To validate the model, we performed SIMS measurements on silicon samples implanted with boron with an energy of 3 keV and doses of 3×1013 cm-2 and 4×1014 cm-2 annealed with a XeCl excimer laser with a wavelength of 308 nm, a pulse duration of 160 ns, and up to 10 consecutive pulses. After calibration, our model is able to reproduce the measured profiles for the different process conditions.