Amorphes Siliciumkarbid für photovoltaische Anwendungen

Within this work amorphous SiC is investigated for its applicability in photovoltaic devices. The temperature stability and dopability of SiC makes this material very attractive for applications in this area. Physical basics of amorphous SiC networks and plasma processes are discussed and first measurements with FTIR of the different layer types show the complexity of the network. The special features of the plasma reactor such as high temperature deposition and two-source excitation are also discussed. Beside plasma etching I furthermore tested the etching behaviour of stoichiometric SiC in different wet chemical etching solutions. The results show that etching of SiC, especially when it is already annealed, is very difficult for both etching processes. Furthermore, stress measurements of our layers deposited and annealed at different temperatures show the change of stress from compressive (