US2011/0006406A1: Fabrication of Porogen Residue Free and Mechanically Robust Low-k Materials

A method is provided for producing a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa. The method starts with depositing a SiCOH film using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) or Chemical Vapor Deposition (CVD) onto a substrate and then first Perfonning an atomic hydrogen treatment at elevated wafer temperature in the range of 200 C up to 350 C to remove all the porogens and then performing a UV assisted thennal curing step. status: published