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Optical band gap of BiFe03 grown by adsorption-controlled molecular-beam epitaxy
- Source :
- Applied physics letters 92, 142908 (2008). doi:10.1063/1.2901160
- Publication Year :
- 2008
- Publisher :
- American Institute of Physics, 2008.
-
Abstract
- BiFeO3 thin films have been deposited on (001) SrTiO3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with omega rocking curve full width at half maximum values as narrow as 29 arc sec (0.008 degrees). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO3 films. (C) 2008 American Institute of Physics.
- Subjects :
- ddc:530
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Applied physics letters 92, 142908 (2008). doi:10.1063/1.2901160
- Accession number :
- edsair.od......3364..1e9dc6b515dcd6b059008ca8b8ae5dc0