Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices

MLA

Bisi, Davide, et al. Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices. Jan. 2013. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.od......3657..71182c142a85bfeeb3d11bd74c5d051d&authtype=sso&custid=ns315887.

APA

Bisi, D., Stocco, A., Rampazzo, F., Meneghini, M., Meneghesso, G., Zanoni, E., Dammann, M., Brückner, P., & Mikulla, M. (2013). Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices.

Chicago

Bisi, Davide, Antonio Stocco, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, M. Dammann, P. Brückner, and M. Mikulla. 2013. “Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices,” January. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.od......3657..71182c142a85bfeeb3d11bd74c5d051d&authtype=sso&custid=ns315887.