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Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications
- Publication Year :
- 2013
- Subjects :
- Gallium Nitride
AlGaN/GaN HEMT
HEMT
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.od......3657..c72c7d57ad9059b775222e36e6a82839