Characterization of 0.25 um and 0.5 um AlGaN/GaN HEMT Devices forHigh Power Switching Applications

MLA

Pirola, M., et al. Characterization of 0.25 Um and 0.5 Um AlGaN/GaN HEMT Devices ForHigh Power Switching Applications. Sept. 2014. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.od......3667..4c0f38039e2b5c4a7cf5a588189072f0&authtype=sso&custid=ns315887.

APA

Pirola, M., Camarchia, V., Quaglia, R., Ciccognani, W., Limiti, E., & Ayllon, N. (2014). Characterization of 0.25 um and 0.5 um AlGaN/GaN HEMT Devices forHigh Power Switching Applications.

Chicago

Pirola, M, V Camarchia, R Quaglia, W Ciccognani, E Limiti, and N Ayllon. 2014. “Characterization of 0.25 Um and 0.5 Um AlGaN/GaN HEMT Devices ForHigh Power Switching Applications,” September. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.od......3667..4c0f38039e2b5c4a7cf5a588189072f0&authtype=sso&custid=ns315887.