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Computing with Ferroelectric FETs
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Transistors with integrated ferroelectrics could (i) enable a better switch (i.e., offer steeper subthreshold swings), (ii) are CMOS compatible, (iii) have multiple operating modes (i.e., I-V characteristics can also enable compact, 1-transistor, non-volatile storage elements, as well as analog synaptic behavior), and (iv) have been experimentally demonstrated (i.e., with respect to all of the aforementioned operating modes). These device-level characteristics offer unique opportunities at the circuit, architectural, and system-level, and are considered here from device, circuit/architecture, and foundry-level perspectives.
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.od......4179..776421d54647a5a058431e35a4f9ef76