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High-Bandwidth Photodiodes on Silicon Nitride Supporting Net Bitrates in Excess of 350 Gbit/s

Authors :
Maes, Dennis
Hu, Qian
Borkowski, Robert
Lefevre, Yannick
Roelkens, Gunther
Lemey, Sam
Peytavit, Emilien
Kuyken, Bart
Department of Information Technology (INTEC)
Universiteit Gent = Ghent University (UGENT)
Photonics Research Group
Universiteit Gent = Ghent University (UGENT)-Universiteit Gent = Ghent University (UGENT)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)
Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
Photonique THz - IEMN (PHOTONIQUE THZ - IEMN)
Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)
Source :
European Conference on Optical Communication, ECOC 2022, European Conference on Optical Communication, ECOC 2022, Sep 2022, Basel, Switzerland
Publication Year :
2022
Publisher :
HAL CCSD, 2022.

Abstract

International audience; Silicon-nitride-based integrated photonic platforms currently lack fast photodiodes, limiting its adoption for high-speed optical transceivers. We show uni-traveling-carrier (UTC) photodiodes heterogeneously integrated by means of micro-transfer-printing and demonstrate their excellent bandwidth performance at 1550 nm, achieving net bit rates in excess of 350 Gbit/s.

Details

Language :
English
Database :
OpenAIRE
Journal :
European Conference on Optical Communication, ECOC 2022, European Conference on Optical Communication, ECOC 2022, Sep 2022, Basel, Switzerland
Accession number :
edsair.od......4254..5c9c9f90d30b6c13b4a230af3296a10d